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8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

Name: 8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate
Brand: Hangzhou HCJingRui Technology Co., Ltd.
SKU: IfBRMOuzhPcY
Price: 2400.00 USD
Availability: InStock

US$2,500.00

3-9 piece

US$2,450.00

10-49 piece

US$2,400.00

50+ piece

Port:

Shanghai, China

Production Capacity:

50000

Payment Terms:

L/C, T/T, Paypal

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Hangzhou HCJingRui Technology Co., Ltd.

Zhejiang, China

Last Login Date:

Jul 24, 2025

Business Type:

Manufacturer/Factory, Trading Company

Main Products:

Sic/Sapphire /GaN/Si Substrate & Epitaxy, 6n Sic Powder, Silicon Carbide Ingot/Sapphire Ingot, Sic Cutting Disc, Testing, Custom Processing, Wafers, Chips, Silicon Carbide Power Devices etc

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Product Description

Company Info

Basic Info.

Model NO.

4H N-type Ultra-P Grade

Application

Diode, Power Electronic Components

Certification

RoHS

Manufacturing Technology

Pvt

Material

6n Sic Powder

Model

4h N-Type

Package

Epi-Ready with Vacuum Packaging

Type

N-Type Semiconductor

Diameter

8 Inch

Thickness

500±25μm

Poly Type

Resistivity

0.015~0.025ohm·cm

Ttv

≤7μm

Warp

≤30μm

(Afm) Front (Si-Face) Roughness

Ra≤0.2nm

Trademark

Transport Package

Multi-Waferorsingle Wafer Cassette Packaging

Specification

8Inch 4H N-type

Origin

China

HS Code

2804611900

Product Description

The 8-inch N-type silicon carbide substrate is mainly used in new energy vehicles, high-voltage transmission and substations, white appliances, high-speed trains, motors, photovoltaic inverters, pulse power supplies and other fields. It has the advantages of reducing equipment energy loss, improving equipment reliability, reducing equipment size, and improving equipment performance. It has irreplaceable advantages in the manufacture of power electronic devices.

8 Inch N-type SiC substrate wafer

No.	Items	Unit	Ultra-P Grade	Production Grade	Dummy Grade
1.Boule Parameters
1.1	Polytype	--	4H	4H	4H
1.2	Surface orientation	°	4°toward<11-20>±0.5º	4°toward<11-20>±0.5º	4°toward<11-20>±0.5º
2. Electrical Parameters
2.1	Dopant	--	n-type Nitrogen	n-type Nitrogen	n-type Nitrogen
2.2	Resistivity	ohm·cm	0.015~0.025ohm·cm	0.015~0.025ohm·cm	NA
3. Mechanical Parameters
3.1	Diameter	mm	200.0±0.2mm	200.0±0.2mm	200.0±0.2mm
3.2	Thickness	μm	500±25μm	500±25μm	500±25μm
3.3	Notch orientation	°	[1-100]±5°	[1-100]±5°	[1-100]±5°
3.4	Notch depth	mm	1~1.5mm	1~1.5mm	1~1.5mm
3.5	LTV	μm	≤3μm(10mm*10mm)	≤5μm(10mm*10mm)	≤15μm(10mm*10mm)
3.6	TTV	μm	≤7μm	≤10μm	≤20μm
3.7	Bow	μm	-20μm~20μm	-25μm~25μm	-65μm~65μm
3.8	Warp	μm	≤30μm	≤35μm	≤70μm
3.9	(AFM) Front (Si-face) Roughness	nm	Ra≤0.2nm	Ra≤0.2nm	Ra≤0.2nm
4. Structure
4.1	Micropipe density	ea/cm2	<0.2ea/cm2	<2ea/cm2	<50ea/cm2
4.2	Metal impurities	atoms/cm2	≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V, Mn)	≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V,Mn)	≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V, Mn)
4.3	TSD	ea/cm2	≤200ea/cm2	≤500ea/cm2	NA
4.4	BPD	ea/cm2	≤1000ea/cm2	≤2000ea/cm2	NA
4.5	TED	ea/cm2	≤3000ea/cm2	≤7000ea/cm2	NA
5.Front Quality
5.1	Front	--	Si	Si	Si
5.2	Surface Finish	--	CMP Si-face CMP	CMP Si-face CMP	CMP Si-face CMP
5.3	Particles	ea/wafer	≤60(size≥0.3μm)	≤100(size≥0.3μm)	NA
5.4	Scratches	ea/mm	≤5,Total Length≤ 1/2*Diameter	≤5,Total Length≤Diameter	NA
5.5	Edge chips/indents/cracks/contamination/stains	--	None	None	NA
5.6	Polytype areas	--	None	None	≤30%Cumulative area)
5.7	Front laser marking	--	None	None	None
6. Back Quality
6.1	Back finish	--	C-face polished	C-face polished	C-face polished
6.2	Scratches	ea/mm	≤5,Total Length≤Diameter	NA	NA
6.3	Back defects (edge chips/indents)	--	None	None	NA
6.4	Back roughness	nm	Ra≤5nm	Ra≤5nm	Ra≤5nm
6.5	Back laser marking	--	Notch, SEMI	Notch, SEMI	Notch, SEMI
7.Edge
7.1	Edge	--	Chamfer	Chamfer	Chamfer
8. Packaging
8.1	Packaging	--	Epi-ready with vacuum packaging	Epi-ready with vacuum packaging	Epi-ready with vacuum packaging
8.2	Packaging	--	Multi-wafer or single wafer cassette packaging	Multi-wafer or single wafer cassette packaging	Multi-wafer or single wafer cassette packaging
Notes: "NA"means no request. Items not metioned may refer to SEMI-STD.

FAQ

Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.

Address: No. 666, Tianmushan West Road, Yuhang District, Hangzhou, Zhejiang, China

Business Type: Manufacturer/Factory, Trading Company

Business Range: Chemicals, Electrical & Electronics, Industrial Equipment & Components

Management System Certification: ISO 9001

Main Products: Sic/Sapphire /GaN/Si Substrate & Epitaxy, 6n Sic Powder, Silicon Carbide Ingot/Sapphire Ingot, Sic Cutting Disc, Testing, Custom Processing, Wafers, Chips, Silicon Carbide Power Devices etc

Company Introduction: Hangzhou HC Jingrui Technology Co., Ltd. is located in Hangzhou, which is known as the "Silicon Valley of Paradise". It is a professional semiconductor material solution provider, committed to providing global customers with the most cost-effective semiconductor material solutions. The company has a strong technical R& D team, composed of graduate students and doctors, with a diligent team and strong R& D capabilities. The company technical backbones have been engaged in material preparation and related equipment design and development for many years, and have in-depth research on the physical, chemical and electrical properties of materials, and material preparation processes. The accumulation of years of theoretical accumulation and practical experience of scientific and technological personnel has enabled the company to have unique insights and unique advantages in the development of related materials and equipment, while ensuring that the company′s product performance and equipment design solutions meet the actual technical and process requirements of users. The company insists on "winning customers with quality and innovation, serving customers with professionalism and efficiency", customer trust is our driving force, customer requirements are our direction, customer satisfaction is our goal, and we strive to become a leader in the semiconductor material segment!

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