| Customization: | Available |
|---|---|
| Application: | Diode, Power Electronic Components |
| Certification: | RoHS |
Suppliers with verified business licenses
The n-Type Substrates is an essential and important material to support the development of power electronics industry, which can be widely used in high-power high-frequency electronic devices, electric vehicle, photovoltaic inverter, rail transit power control system, etc.
The company mainly supplies conductive silicon carbide substrates, which are suitable for the manufacture of power devices such as Schottky diodes, MOSFETs, and IGBTs. The sizes mainly include 2 inches, 4 inches, 6 inches,and 8 inches, and non-standard sizes can be customized.
Complete Growth-Process-Test
| No. | Items | Unit | Ultra-P Grade | Production Grade | Research Grade | Dummy Grade |
| 1.Boule Parameters | ||||||
| 1.1 | Poly type | -- | 4H | |||
| 1.2 | Surface orientation error | ° | 4° toward <11-20>±0.15° | 4° toward <11-20>±0.5° | 4° toward <11-20>±0.5° | 4° toward <11-20>±0.5° |
| 2.Electrical Parameters | ||||||
| 2.1 | dopant | cm-³ | n-type Nitrogen | |||
| 2.2 | resistivity | ohm ·cm | 0.016~0.024ohm ·cm | 0.015~0.025ohm ·cm | 0.015~0.025ohm ·cm | NA |
| 3.Mechanical Parameters | ||||||
| 3.1 | diameter | mm | 150 ±0.25 mm | |||
| 3.2 | hickness | μm | 350±25μm | |||
| 3.3 | Primary flat orientation | ° | [1-100]±5° | |||
| 3.4 | Primary flat length | mm | 47.5±1.5mm | 47.5±2.5mm | 47.5±2.5mm | 47.5±2.5mm |
| 3.5 | LTV | μm | ≤2μm(10mm*10mm) | ≤5μm(10mm*10mm) | ≤10μm(10mm*10mm) | ≤15μm(10mm*10mm) |
| 3.6 | TTV | μm | ≤5μm | ≤10 μm | ≤15 μm | ≤20 μm |
| 3.7 | Bow | μm | -15 μm~15 μm | -25 μm~25 μm | -45 μm~45 μm | -65 μm~65 μm |
| 3.8 | Warp | μm | ≤20μm | ≤35μm | ≤50μm | ≤70μm |
| 3.9 | (AFM)Front(Si-face)Roughness | nm | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm |
| 4.Structure | ||||||
| 4.1 | micropipe density | ea/cm² | ≤0.15 ea/cm² | ≤0.5 ea/cm² | ≤1 ea/cm² | ≤2 ea/cm² |
| 4.2 | metal content | atoms/cm² | ≤5E10 atoms/cm² | ≤1E11 atoms/cm² | ≤1E11 atoms/cm² | NA |
| 4.3 | TSD | ea/cm² | ≤100ea/cm² | ≤300ea/cm² | ≤500ea/cm² | NA |
| 4.4 | BPD | ea/cm² | ≤600ea/cm² | ≤1000ea/cm² | ≤1500ea/cm² | NA |
| 5.Front Quality | ||||||
| 5.1 | front | -- | Si | Si | Si | Si |
| 5.2 | surface finish | -- | Si-face CMP | Si-face CMP | Si-face CMP | Si-face CMP |
| 5.3 | particle | ea/wafer | ≤60(size≥0.3 μm) | ≤100(size≥0.3 μm) | NA | NA |
| 5.4 | scratches | ea/mm | ≤2,Total Length≤1/2*Diameter | ≤5,Total Length≤Diameter | NA | NA |
| 5.5 | chips/indents/cracks/stai | -- | None | None | None | NA |
| 5.6 | Polytype areas | -- | None | ≤0.5%Cumulative area) | ≤2%Cumulative area) | ≤5%Cumulative area) |
| 5.7 | front marking | -- | None | None | None | None |
| 6.Back Quality | ||||||
| 6.1 | back finish | -- | C-face polished | |||
| 6.2 | scratches | ea/mm | ≤5,Total Length≤Diameter | NA | NA | NA |
| 6.3 | Back defects edge | -- | None | None | None | NA |
| 6.4 | Back roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra ≤5nm | Ra ≤5nm | Ra ≤5nm |
| 7.Edge | ||||||
| 7.1 | Wafer Edge | -- | Chamfer | Chamfer | Chamfer | Chamfer |
| 8.Packaging | ||||||
| 8.1 | Packaging | -- | Epi-ready with vacuum packaging | |||
| 8.2 | Packaging | -- | Multi-waferorSingle wafer cassette packaging | |||
| SEMI-STDNotes:"NA"means no request.Items not metioned may refer to SEMI-STD. | ||||||
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
){kind=link}