4inch Dummy Grade Semi-Insulating Silicon Carbide Wafer

• Customization: Available
• Application: Diode, Power Electronic Components
• Certification: CCC, RoHS
• Material: 6n Sic Powder
• Model: N-Type
• Package: Epi-Ready with Vacuum Packaging
• Type: N-Type Semiconductor
• Polytype: 4h
• Surface Orientation on-Axis: <0001>
• Ttv: ≤5μm
• Ltv: ≤3μm(10mm*10mm)
• Metal Impurities: ≤5e12atoms/Cm2
• Transport Package: Multi-Waferorsingle Wafer Cassette Packaging
• Specification: 4Inch
• Trademark: HC
• Origin: China
• HS Code: 2849200000
• Production Capacity: 50000

Product Description

        Semi-insulating silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of semi-insulating silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based radio frequency devices through heteroepitaxial growth and device manufacturing. They are important basic materials for the development of the third-generation semiconductor industry. In order to meet customer demand for 4,6-inch products, the company provides domestic and foreign customers with 4,6-inch semi-insulating substrate products with high cost performance in batches.

Downstream products and applications
     High-purity semi-insulated silicon carbide single crystal substrate is mainly used in 5G communication, radar system, seeker, satellite communication, aircraft and other fields, with the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed, large-capacity information transmission and other applications, and is regarded as the most ideal substrate for the production of microwave power devices.

6 4 Inch High Purity Semi-insulating SiC Substrate
No.	Items	Unit	Production Grade	Dummy Grade
1.Crystal Parameters
1.1	Polytype	--	4H	4H
1.2	Surface orientation on-axis	--	<0001>	<0001>
1.3	Surface orientation off-axis	°	0±0.2°	0±0.2°
1.4	(0004)(FWHM)	arcsec	≤45arcsec	≤100arcsec
2. Electrical Parameters
2.1	Type	--	HPSI	HPSI
2.2	Resistivity	ohm·cm	≥1E10ohm·cm	70% area>1E5ohm·cm
3.Mechanical Parameters
3.1	Diameter	mm	99.5~100mm	99.5~100mm
3.2	Thickness	μm	500±25μm	500±25μm
3.3	Notch orientation	°	[1-100]±5°	[1-100]±5°
3.4	Notch Depth	mm	1~1.25mm	1~1.25mm
3.5	LTV	μm	≤2μm(5mm*5mm)	NA
3.6	TTV	μm	≤5μm	≤15μm
3.7	Bow	μm	-15μm~15μm	-45μm~45μm
3.8	Warp	μm	≤20μm	≤50μm
3.9	(AFM) Front (Si-face) Roughness	nm	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)
4.Structure
4.1	Micropipe density	ea/cm2	≤1 ea/cm2	≤10ea/cm2
4.2	Carbon inclusions density	ea/cm2	≤1 ea/cm2	NA
4.3	Hexagonal void	--	None	NA
4.4	Metal impurities	atoms/cm2	≤5E12	NA
5. Quality
5.1	Front	--	Si	Si
5.2	Surface Finish	--	CMP Si-face CMP	CMP Si-face CMP
5.3	Particles	ea/wafer	≤60(size≥0.3μm)	NA
5.4	Scratches	ea/mm	≤2 ,Total Length≤Diameter	NA
5.5	Orange peel/pits/stains/striations/cracks/contamination	--	None	NA
5.6	Edge chips/indents/fracture	--	None	None
5.7	Polytype areas	--	None	≤30% (Cumulative area)
5.8	Front laser marking	--	None	None
6. Back Quality
6.1	Back finish	--	C-face CMP	C-face CMP
6.2	Scratches	ea/mm	≤5 ,Total Length≤2*Diameter	NA
6.3	Back defects (edge chips/indents)	--	None	None
6.4	Back roughness	nm	Ra≤0.2nm(5μm*5μm)	Ra≤0.2nm(5μm*5μm)
6.5	Back laser marking	--	SEMI,NOTCH	SEMI,NOTCH
6.6	Edge	--	Chamfer	Chamfer
Notes: "NA"means no request. Items not metioned may refer to SEMI-STD.

FAQ
Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A:  A: Yes, we can customize the specifications according to your needs.