| Customization: | Available |
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| Certification: | CE, ISO |
| Place Style: | Vertical |
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| Silicon carbide crystal growth furnace Product Introduction: This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) and aluminumnitride(AIN). Product Characteristics: Growable 8-inch silicon carbide crystal Equipped with crucible lifting and rotating functions Independently developed control system, capable of remote control Crystal size: 6/8/12 inches Heating temperature: 2400ºC Heating method: induction/resistance Temperature detection: Pyrometer Extreme vacuum: 9.5E-5Pa Gas system: 3 channels |
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