2-Inch Free-Standing GaN Wafer (silicon doped)

Product Details
Customization: Available
Formula: 4h
Size: Ф 50.8 ± 1 mm
Manufacturer/Factory, Trading Company
Gold Member Since 2024

Suppliers with verified business licenses

Registered Capital
1000000 RMB
Plant Area
101~500 square meters
  • 2-Inch Free-Standing GaN Wafer (silicon doped)
  • 2-Inch Free-Standing GaN Wafer (silicon doped)
  • 2-Inch Free-Standing GaN Wafer (silicon doped)
  • 2-Inch Free-Standing GaN Wafer (silicon doped)
  • 2-Inch Free-Standing GaN Wafer (silicon doped)
  • 2-Inch Free-Standing GaN Wafer (silicon doped)
Find Similar Products
  • Overview
  • Product Description
  • FAQ
Overview

Basic Info.

Resistivity 300K
< 0.5 Ω*Cm
Specification
GaN-FS-C-U-C50
Origin
China
HS Code
2850000090
Production Capacity
50000

Product Description

                 GaN single crystal substrates for RF electronics
GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
HEMT devices based on GaN single crystal substrates provide solutions for simultaneous high frequency, wide spectrum, high efficiency, high power density and high reliability.
Semi-insulated GaN, Fe doped, C doped

2-Inch Free-Standing GaN Wafer (silicon doped)

                2-Inch Free-Standing GaN Wafer (silicon doped)

Product Description
                                             2-inch Free-standing U-GaN Substrates
  Excellent level (S) Production level (A) Research level (B) Dummy level (C) 2-Inch Free-Standing GaN Wafer (silicon doped)

















Note:
(1) Useable area: edge and macro defects exclusion
(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o
S-1 S-2 A-1 A-2
Dimension 50.8 ± 1 mm
Thickness 350 ± 25 μm
Orientation flat (1-100) ± 0.5o, 16 ± 1 mm
Secondary orientation flat (11-20) ± 3o, 8 ± 1 mm
Resistivity (300K) < 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50)
TTV ≤ 15 μm
BOW  20 μm  40 μm
Ga face surface roughness < 0.2 nm (polished)
or < 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness 0.5 ~1.5 μm
option: 1~3 nm (fine ground); < 0.2 nm (polished)
Package Packaged in a cleanroom in single wafer container
Useable area > 90% >80% >70%
Dislocation density <9.9x105 cm-2 <3x106 cm-2 <9.9x105 cm-2 <3x106 cm-2 <3x106 cm-2
Orientation:C plane (0001) off angle toward M-axis 0.35 ± 0.15o
(3 points)
0.35 ± 0.15o
(3 points)
0.35 ± 0.15o
(3 points)
Macro defect density (hole)  0 cm-2 < 0.3 cm-2 < 1 cm-2
Max size of macro defects   < 700 μm < 2000 μm < 4000 μm

 

FAQ

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A:  A: Yes, we can customize the specifications according to your needs.
2-Inch Free-Standing GaN Wafer (silicon doped)

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier