| Silicon carbide crystal growth furnace |
| 1. Equipment structure |
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| 2. Equipment overview |
| The silicon carbide crystal growth furnace is mainly used to grow large-sized, high-quality SiC single crystals using the physical vapor transport method (PVT). |
| 3. Technical advantages |
| 1. Adopt a dual-coil design and based on multi-physics simulation, optimize the spacing, number of turns, coil position and other parameters of the two coils to achieve independent control of the temperature field of the seed crystal and the source, and achieve large-size and high-quality silicon carbide growth. The warm field. |
| 2. Carry out research on the design of the crucible's independent rotating mechanism, and innovatively introduce an independent support design into the crucible's rotating structure, so that the crucible can rotate independently of the heat preservation during the growth process and reduce the impact of heat preservation on the temperature field of the crucible. Solve the problem of uncontrollable temperature field due to thermal insulation loss and deformation between furnaces during the growth of silicon carbide single crystal, and improve the crystal growth yield. |
3. Combine numerical simulation and theoretical calculations to optimize the crucible and temperature gradient structures, reveal the crystallization and kinetic processes, break through the preparation process of 6-inch SiC crystals, and effectively solve the difficult problem of defect enrichment in SiC crystals.
4. Equipment parameters
| quartz reflector |
Diameter 440mmx900mm |
Power frequency, HZ |
50±1 |
| Maximum operating temperature 2600° C (in argon) |
|
Number of phases |
3 |
| working gas |
Argon, Nitrogen |
Compressed gas, MPa |
0.6 |
| Maximum vacuum value Torr |
10-5 Torr |
Maximum power, kw |
50 |
| Generator power kw |
70kw |
Crystal growth days, days |
7 |
| Generator power frequency kHz |
12kHz |
Nitrogen consumption, m3/furnace |
≤0.25 |
| Automated parameter control system |
|
Electrode connection method |
△ |
| cooling system |
50kW cooling unit (closed circuit) |
Equipment dimensions (length x width x height) mm |
920x920x2790 |
| Supply voltage, V |
380±19 |
Maximum current, A |
90 |
| Output voltage, V |
500-550 |
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Note: Customized services can be provided according to customer requirements
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