4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer

Product Details
Customization: Available
Application: Diode, Power Electronic Components
Certification: CCC, RoHS
Manufacturer/Factory, Trading Company
Gold Member Since 2024

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Registered Capital
1000000 RMB
Plant Area
101~500 square meters
  • 4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer
  • 4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer
  • 4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer
  • 4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer
  • 4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer
  • 4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer
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Basic Info.

Manufacturing Technology
Pvt
Material
6n Sic Powder
Model
N-Type
Package
Epi-Ready with Vacuum Packaging
Type
N-Type Semiconductor
Polytype
4h
Surface Orientation on-Axis
<0001>
Ttv
≤5μm
Ltv
≤3μm(10mm*10mm)
Metal Impurities
≤5e12atoms/Cm2
Transport Package
Multi-Waferorsingle Wafer Cassette Packaging
Specification
4Inch
Trademark
HC
Origin
China
HS Code
2849200000
Production Capacity
50000

Product Description

        Semi-insulating silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of semi-insulating silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based radio frequency devices through heteroepitaxial growth and device manufacturing. They are important basic materials for the development of the third-generation semiconductor industry. In order to meet customer demand for 4,6-inch products, the company provides domestic and foreign customers with 4,6-inch semi-insulating substrate products with high cost performance in batches.

Downstream products and applications
     High-purity semi-insulated silicon carbide single crystal substrate is mainly used in 5G communication, radar system, seeker, satellite communication, aircraft and other fields, with the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed, large-capacity information transmission and other applications, and is regarded as the most ideal substrate for the production of microwave power devices.
4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer
4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer
                                                                                                                                                                                      6 4 Inch High Purity Semi-insulating SiC Substrate
No. Items Unit Production Grade Dummy Grade
1.Crystal Parameters
1.1 Polytype -- 4H 4H
1.2 Surface orientation on-axis -- <0001> <0001>
1.3 Surface orientation off-axis ° 0±0.2° 0±0.2°
1.4 (0004)(FWHM) arcsec 45arcsec 100arcsec
2. Electrical Parameters
2.1  Type -- HPSI HPSI
2.2  Resistivity ohm·cm 1E10ohm·cm 70% area>1E5ohm·cm
3.Mechanical Parameters
3.1 Diameter mm 99.5~100mm 99.5~100mm
3.2  Thickness μm 500±25μm 500±25μm
3.3  Notch orientation ° [1-100]±5° [1-100]±5°
3.4  Notch Depth mm 1~1.25mm 1~1.25mm
3.5  LTV μm ≤2μm(5mm*5mm) NA
3.6  TTV μm 5μm 15μm
3.7  Bow μm -15μm~15μm -45μm~45μm
3.8  Warp μm ≤20μm 50μm
3.9 (AFM) Front (Si-face) Roughness nm Ra0.2nm(5μm*5μm) Ra0.2nm(5μm*5μm)
4.Structure
4.1  Micropipe density ea/cm2 1 ea/cm2 10ea/cm2
4.2  Carbon inclusions density ea/cm2 1 ea/cm2 NA
4.3 Hexagonal void -- None NA
4.4 Metal impurities atoms/cm2 5E12 NA
5. Quality
5.1  Front -- Si Si
5.2  Surface Finish -- CMP Si-face CMP CMP Si-face CMP
5.3  Particles ea/wafer 60(size0.3μm) NA
5.4  Scratches ea/mm ≤2 ,Total LengthDiameter NA
5.5  Orange
peel/pits/stains/striations/cracks/contamination
-- None NA
5.6 Edge chips/indents/fracture -- None None
5.7 Polytype areas -- None 30% (Cumulative area)
5.8  Front laser marking -- None None
6. Back Quality
6.1  Back finish -- C-face CMP  C-face CMP
6.2  Scratches ea/mm ,Total Length2*Diameter NA
6.3  Back defects (edge
chips/indents)
-- None None
6.4  Back roughness nm Ra0.2nm(5μm*5μm) Ra0.2nm(5μm*5μm)
6.5  Back laser marking -- SEMI,NOTCH SEMI,NOTCH
6.6  Edge --  Chamfer  Chamfer
Notes: "NA"means no request. Items not metioned may refer to SEMI-STD.
FAQ
Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A:  A: Yes, we can customize the specifications according to your needs.
4-Inch P-Grade Semi-Insulating Sic Substrate Sic Wafer

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