4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

Product Details
Customization: Available
Certification: RoHS
Material: Power Semiconductor
Manufacturer/Factory, Trading Company
Gold Member Since 2024

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Registered Capital
1000000 RMB
Plant Area
101~500 square meters
  • 4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
  • 4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
  • 4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
  • 4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
  • 4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
  • 4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
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Overview

Basic Info.

Type
N-Type Semiconductor
Poly Type
4h
Diameter
150 ±0.25 mm
Thickness
≥10mm
Specification
4 "6" 8"
Trademark
HC
Origin
China
HS Code
2804611900
Production Capacity
50000

Product Description

 
Product description

Semi-insulating silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of semi-insulating silicon carbide crystals. As an important raw material for third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based radio frequency devices through heteroepitaxial growth and device manufacturing. They are important basic materials for the development of the third-generation semiconductor industry. 6-inch substrates are currently the mainstream size in the industry. The company provides domestic and foreign customers with cost-effective 6-inch semi-insulating substrate products in batches.

Microwave radio frequency devices are made by growing a gallium nitride epitaxial layer on a semi-insulating silicon carbide substrate to produce silicon carbide-based gallium nitride epitaxial wafers, which can be further made into microwave radio frequency devices such as HEMT, which are used in information communication, radio detection and other fields

 

Downstream products and applications

By growing a gallium nitride heteroepitaxial layer on a semi-insulating silicon carbide substrate, a silicon carbide-based gallium nitride epitaxial wafer is produced. Through wafer manufacturing, packaging and testing, it can be further made into microwave RF devices, which are mainly used in the RF field, such as 5G communications, phased array radars, radio detectors, etc.

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
 6-inch semi-insulating substrate
     Technical achievements
           Zero microtube density control technology
           Single crystal control technology
           Package Control Technology
           Resistivity Control Technology
           Impurity Control Technology
           Substrate step width control technology
           Substrate surface control technology

                                                                                 
                                                                 6 Inch N-type SiC ingot sic rod
4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
FAQ

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
 A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
 A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.

4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

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