6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

Product Details
Customization: Available
Certification: CCC, CE, RoHS
Diameter: 6inch
Manufacturer/Factory, Trading Company
Gold Member Since 2024

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Registered Capital
1000000 RMB
Plant Area
101~500 square meters
  • 6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
  • 6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
  • 6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
  • 6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
  • 6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
  • 6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
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Overview

Basic Info.

Poly Type
4h
Ttv
≤20 μm
Warp
≤70μm
(Afm)Front(Si-Face)Roughness
Ra≤0.2nm
Specification
6Inch
Trademark
HC
Origin
China
HS Code
2849200000
Production Capacity
50000

Product Description

       SIC Silicon Carbide Conductive, Semi-Insulating Substrate Wafers (Customizable) ★2" 4"6" 8" Conductive Silicon Carbide Substrate Wafers Silicon Carbide (SiC) is a new type of compound semiconductor material with superior performance. Silicon carbide semiconductors have excellent properties such as large bandgap width (about 3 times that of silicon), high critical field strength (about 10 times that of silicon), and high thermal conductivity (about 3 times that of silicon). They are ideal semiconductor materials for making high-temperature, high-frequency and high-power power electronic devices (power chips). At the same time, it is also an excellent semiconductor material second only to diamond. At present, we provide standard 2, 4, 6, and 8-inch silicon carbide substrate wafers. Used for the production of Schottky diodes (SBD), metal oxide semiconductor field effect transistors (MOSFET), junction field effect transistors (JFET) and bipolar junction transistors (BJT). These power electronic devices can be widely used in green energy and energy-saving systems including solar inverters, wind power generation and energy storage, hybrid power, electric vehicles, charging piles, smart grids, and household appliances.

   6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
                                                                                                6 Inch N-type SiC substrate wafer
 
No. Items Unit Ultra-P Grade Production Grade Research Grade Dummy Grade
1.Boule Parameters
1.1 Poly type -- 4H
1.2 Surface orientation error ° 4° toward  <11-20>±0.15° 4°  toward  <11-20>±0.5° 4° toward  <11-20>±0.5° 4°  toward  <11-20>±0.5°
2.Electrical Parameters
2.1 dopant cm-³ n-type Nitrogen
2.2 resistivity ohm ·cm 0.016~0.024ohm ·cm 0.015~0.025ohm ·cm 0.015~0.025ohm ·cm NA
3.Mechanical Parameters
3.1 diameter mm 150 ±0.25 mm
3.2 hickness μm 350±25μm
3.3 Primary flat orientation ° [1-100]±5°
3.4 Primary flat length mm 47.5±1.5mm 47.5±2.5mm 47.5±2.5mm 47.5±2.5mm
3.5 LTV μm ≤2μm(10mm*10mm) ≤5μm(10mm*10mm) ≤10μm(10mm*10mm) ≤15μm(10mm*10mm)
3.6 TTV μm ≤5μm ≤10 μm ≤15 μm ≤20 μm
3.7 Bow μm -15 μm~15  μm -25 μm~25   μm -45 μm~45    μm -65   μm~65   μm
3.8 Warp μm ≤20μm ≤35μm ≤50μm ≤70μm
3.9 (AFM)Front(Si-face)Roughness nm Ra≤0.2nm Ra≤0.2nm Ra≤0.2nm Ra≤0.2nm
4.Structure
4.1 micropipe density ea/cm² ≤0.15 ea/cm² ≤0.5 ea/cm² ≤1 ea/cm² ≤2 ea/cm²
4.2 metal content atoms/cm² ≤5E10 atoms/cm² ≤1E11 atoms/cm² ≤1E11 atoms/cm² NA
4.3 TSD ea/cm² ≤100ea/cm² ≤300ea/cm² ≤500ea/cm² NA
4.4 BPD ea/cm² ≤600ea/cm² ≤1000ea/cm² ≤1500ea/cm² NA
5.Front Quality
5.1 front -- Si Si Si Si
5.2 surface finish -- Si-face CMP Si-face CMP Si-face CMP Si-face CMP
5.3 particle ea/wafer ≤60(size≥0.3 μm) ≤100(size≥0.3 μm) NA NA
5.4 scratches ea/mm ≤2,Total Length≤1/2*Diameter ≤5,Total Length≤Diameter NA NA
5.5 chips/indents/cracks/stai -- None None None NA
5.6 Polytype areas -- None ≤0.5%Cumulative area) ≤2%Cumulative area) ≤5%Cumulative area)
5.7 front marking -- None None None None
6.Back Quality
6.1 back finish -- C-face polished
6.2 scratches ea/mm ≤5,Total Length≤Diameter NA NA NA
6.3 Back defects edge -- None None None NA
6.4 Back roughness nm Ra≤0.2nm(5μm*5μm) Ra ≤5nm Ra ≤5nm Ra ≤5nm
7.Edge
7.1 Wafer Edge -- Chamfer Chamfer Chamfer Chamfer
8.Packaging
8.1 Packaging -- Epi-ready with vacuum packaging
8.2 Packaging -- Multi-waferorSingle wafer cassette packaging
SEMI-STDNotes:"NA"means no request.Items not metioned may refer to SEMI-STD.
FAQ

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
 A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
 A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
 

6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor

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