N-Doped (N-Type) or Al-Doped (P-Type) Epitaxial Wa
Thick Film Epitaxial Wafer
30~200um
Epitaxial Wafer Type
Sbd-Level, Mosfet Level
Specification
6Inch
Origin
China
HS Code
2804611900
Production Capacity
50000
Product Description
We are constantly pursuing higher crystal quality and processing quality to better meet customer needs. We can currently supply 6-inch and 8-inch conductive products in batches.
Power electronic devices are made by growing a silicon carbide epitaxial layer on a conductive silicon carbide substrate to produce a silicon carbide homoepitaxial wafer, which can be further made into power devices such as Schottky diodes, MOSFET, IGBT, etc., which are used in new energy vehicles, rail transportation, and high-power transmission and substation.
FAQ
Q1: What's the way of shipping ? A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc. Q2: How to pay? A: T/T, PayPal and etc.. Q3: What's the deliver time? A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity. Q4: Can I customize the products based on my need? A: Yes, we can customize the specifications according to your needs. Q5: How to guarantee the quality of your products? A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
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