We are constantly pursuing higher crystal quality and processing quality to better meet customer needs. We can currently supply 6-inch and 8-inch conductive products in batches.
Power electronic devices are made by growing a silicon carbide epitaxial layer on a conductive silicon carbide substrate to produce a silicon carbide homoepitaxial wafer, which can be further made into power devices such as Schottky diodes, MOSFET, IGBT, etc., which are used in new energy vehicles, rail transportation, and high-power transmission and substation.
FAQ
Q1: What's the way of shipping ? A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc. Q2: How to pay? A: T/T, PayPal and etc.. Q3: What's the deliver time? A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity. Q4: Can I customize the products based on my need? A: Yes, we can customize the specifications according to your needs. Q5: How to guarantee the quality of your products? A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.