Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

• Customization: Available
• Application: Diode, Power Electronic Components
• Batch Number: 2023+
• Model NO.: 2~4inch 3C N-type
• Manufacturing Technology: Pvt
• Material: 3c-Sic Powder
• Diameter: 6inch
• Hickness: 350±25μm
• Poly Type: 4h/6h/3c
• Resistivity: 0.06~0.11 ≤0.1 Ωcm
• Specification: 4Inch
• Trademark: HC
• Origin: China
• HS Code: 2804611900
• Production Capacity: 50000

Product Description

   

Product Description

      4-inch 3C N-type silicon carbide substrate product introduction 3C N-type SiC has higher electron mobility (3C-SiC, 1100 cm2/V.s; 4H-SiC, 900 cm2/V.s). At the same time, because 3C-SiC has a smaller bandgap, the device can have a smaller FN tunneling current and reliability in the oxide layer preparation, which can greatly improve the device product yield.

Main indicators Crystal type: 3C
Size: 50.8±0.38 mm
Thickness: 350±25μm
Microtube density: <0.1 cm-2
Resistivity ≤0.0006 Ω.cm..

   

                                                                                             

FAQ

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
 A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
 A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.