| Customization: | Available |
|---|---|
| Application: | Diode, Power Electronic Components |
| Specification: | Purity>99.9999% |
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Silicon carbide (SiC) is a new type of compound semiconductor material with superior performance. Silicon carbide semiconductors have excellent properties such as large bandgap width (about 3 times that of silicon), high critical field strength (about 10 times that of silicon), and high thermal conductivity (about 3 times that of silicon). They are ideal semiconductor materials for making high-temperature, high-frequency and high-power power electronic devices (power chips). At the same time, it is also an excellent semiconductor material second only to diamond. At present, we provide standard N-type silicon carbide substrate wafers. They are used for the production of Schottky diodes (SBD), metal oxide semiconductor field effect transistors (MOSFET), junction field effect transistors (JFET) and bipolar junction transistors (BJT). These power electronic devices can be widely used in green energy and energy-saving systems including solar inverters, wind power generation and energy storage, hybrid power, elec
| 2 Inch N-type SiC Cutting Wafers | ||||||
| category | NO | project | unit | Production | Research | Dummy |
| 1Boule Parameters |
1.1 | Poly type | -- | 4H | 4H | 4H |
| 1.2 | Surface orientation error | ° | 4 ° toward <11-20> ± 0.5. | 4 ° toward <11-20> ± 0.5. | 4 ° toward <11-20> ± 0.5. | |
| 2 Electrical Parameters |
2.1 | dopant | cm-3 | n-type Nitrogen | n-type Nitrogen | n-type Nitrogen |
| 2.2 | resistivity | ohm ·cm | 0.15~0.028ohm ·cm | 0.15~0.028ohm ·cm | 0.15~0.028ohm ·cm | |
| 3 Mechanical Parameters |
3.1 | diameter | mm | 50.8 ± 0.28mm | 50.8 ± 0.28mm | 50.8 ± 0.28mm |
| 3.2 | hickness | μm | 1200±25 μm | 1200±25 μm | 1200±25 μm | |
| 3.3 | Primary flat orientation | ° | [1-100] ±5 | [1-100] ±5 | [1-100] ±5 | |
| 3.4 | Primary flat length | mm | 16± 2mm | 16± 2mm | 16± 2mm | |
| 3.5 | LTV | μm | ≤ 5 μm(10mm*10mm) | ≤ 10 μm(10mm*10mm) | ≤ 15 μm(10mm*10mm) | |
| 3.6 | TTV | μm | ≤ 10 μm | ≤ 15 μm | ≤ 20 μm | |
| 3.7 | Bow | μm | -25~25μm | -45~45μm | -65~65μm | |
| 3.8 | Warp | μm | ≤ 35 μm | ≤ 50 μm | ≤ 70 μm | |
| 4Structure | 4.1 | micropipe density | ea/cm2 | ≤ 0.2 ea/cm2 | ≤ 0.5 ea/cm2 | ≤ 1 ea/cm2 |
| 4.2 | metal content | atoms/cm2 | NA | NA | NA | |
| 4.3 | TSD | ea/cm2 | ≤ 500ea/cm 2 | NA | NA | |
| 4.4 | BPD | ea/cm2 | ≤ 2000ea/cm2 | NA | NA | |
| 5Front Quality |
5.1 | front | -- | Si | Si | Si |
| 5.2 | surface finish |
-- | Si | Si | Si | |
| 5.5 | /// chips/indents/cracks/stains/contamination |
-- | NA | NA | NA | |
| 5.6 | Polytype areas | -- | None | ≤ 1% (Cumulative area ) | ≤ 1% (Cumulative area ) | |
| 5.7 | front marking | -- | None | None | None | |
| 6 Back Quality |
6.1 | back finish | -- | C | C | C |
| 6.2 | scratches | ea/mm | NA | NA | NA | |
| 6.3 | / Back defects edge chips/indents |
-- | None | None | None | |
| : NA, SEMI-STDNotes: "NA"means no request. Items not metioned may refer to SEMI-STD. | ||||||
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
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