4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

Product Details
Customization: Available
Certification: CCC, CE, RoHS
Ttv: ≤15μm
Manufacturer/Factory, Trading Company
Gold Member Since 2024

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Registered Capital
1000000 RMB
Plant Area
101~500 square meters
  • 4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer
  • 4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer
  • 4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer
  • 4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer
  • 4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer
  • 4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer
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Overview

Basic Info.

Model NO.
4inch Dummy Grade
Thickness
500±25μm
Specification
4 Inch D Grade
Origin
China
HS Code
2804611900
Production Capacity
50000

Product Description

Product Description
        Semi-insulating silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of semi-insulating silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based radio frequency devices through heteroepitaxial growth and device manufacturing. They are important basic materials for the development of the third-generation semiconductor industry. In order to meet customer demand for 4,6-inch products, the company provides domestic and foreign customers with 4,6-inch semi-insulating substrate products with high cost performance in batches.

Downstream products and applications
     High-purity semi-insulated silicon carbide single crystal substrate is mainly used in 5G communication, radar system, seeker, satellite communication, aircraft and other fields, with the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed, large-capacity information transmission and other applications, and is regarded as the most ideal substrate for the production of microwave power devices.4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer
                We are constantly pursuing higher crystal quality and processing quality to better meet customer needs.
Currently, we can supply 4-inch and 6-inch products in batches.
8-inch products are under development.    
                                    
                   4 Inch High Purity Semi-insulating SiC Substrate
  Items Unit Production Grade Dummy  Grade
1.Crystal Parameters
1.1  Polytype -- 4H 4H
1.2  Surface orientation on-axis -- <0001> <0001>
1.3 Surface orientation off-axis ° 0±0.2° 0±0.2°
1.4 (0004)(FWHM) arcsec 45arcsec 100arcsec
2. Electrical Parameters
2.1  Type -- HPSI HPSI
2.2  Resistivity ohm·cm 1E10ohm·cm 70% area>1E5ohm·cm
3.Mechanical Parameters
3.1  Diameter mm 99.5~100mm 99.5~100mm
3.2  Thickness μm 500±25μm 500±25μm
3.3  Primary flat orientation ° [1-100]±5° [1-100]±5°
3.4  Primary flat length mm 32.5±1.5mm 32.5±1.5mm
3.5 Secondary flat position ° ,90±5°
90°CW from primary flat ±5°, silicon
face up
,90±5°
90°CW from primary flat ±5°, silicon
face up
3.6  Secondary flat length mm 18±1.5mm 18±1.5mm
3.7  LTV μm 2μm(5mm*5mm) NA
3.8  TTV μm 5μm 15μm
3.9  Bow μm -15μm~15μm -45μm~45μm
3.10  Warp μm 20μm 50μm
3.11 (AFM) Front (Si-face) Roughness nm Ra0.2nm(5μm*5μm) Ra0.2nm(5μm*5μm)
4.Structure
4.1  Micropipe Density ea/cm2 1ea/cm2 10ea/cm2
4.2 Carbon Density ea/cm2 1ea/cm2 NA
4.3  Hexagonal void -- None NA
4.4  Metal impurities atoms/cm2 5E12atoms/cm2 NA
5.Front Quality
5.1  Front -- Si Si
5.2  Surface Finish -- SiCMP Si-face CMP SiCMP Si-face CMP
5.3  Particles ea/wafer 60(size0.3μm) NA
5.4  Scratches ea/mm ,Total LengthDiameter NA
5.5           
Orange peel/pits/stains/striations/cracks/contamination
mm None NA
5.6         Edge chips/indents/fracture/hex plates   None None
5.7  Polytype areas -- None 30% (Cumulative area)
5.8  Front laser marking -- None None
6.Back Quality
6.1  Back Finish -- CCMP C-face CMP CCMP C-face CMP
6.2  Scratches ea/mm ,Total Length2*Diameter NA
6.3                   Back defects (edge chips/indents) -- None None
6.4  Back roughness nm Ra0.2nm(5μm*5μm) Ra0.2nm(5μm*5μm)
6.5  Back laser marking -- 1mm (from top edge) 1mm (from top edge)
7. Edge
7.1  Edge --  Chamfer  Chamfer
SEMI-STDNotes:"NA"means no request.Items not metioned may refer to SEMI-STD.
FAQ

 

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
 A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
 A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer

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