Customization: | Available |
---|---|
Certification: | CCC, CE, RoHS |
Ttv: | ≤15μm |
Suppliers with verified business licenses
4 Inch High Purity Semi-insulating SiC Substrate | ||||
Items | Unit | Production Grade | Dummy Grade | |
1.Crystal Parameters | ||||
1.1 | Polytype | -- | 4H | 4H |
1.2 | Surface orientation on-axis | -- | <0001> | <0001> |
1.3 | Surface orientation off-axis | ° | 0±0.2° | 0±0.2° |
1.4 | (0004)(FWHM) | arcsec | ≤45arcsec | ≤100arcsec |
2. Electrical Parameters | ||||
2.1 | Type | -- | HPSI | HPSI |
2.2 | Resistivity | ohm·cm | ≥1E10ohm·cm | 70% area>1E5ohm·cm |
3.Mechanical Parameters | ||||
3.1 | Diameter | mm | 99.5~100mm | 99.5~100mm |
3.2 | Thickness | μm | 500±25μm | 500±25μm |
3.3 | Primary flat orientation | ° | [1-100]±5° | [1-100]±5° |
3.4 | Primary flat length | mm | 32.5±1.5mm | 32.5±1.5mm |
3.5 | Secondary flat position | ° | ,90±5° 90°CW from primary flat ±5°, silicon face up |
,90±5° 90°CW from primary flat ±5°, silicon face up |
3.6 | Secondary flat length | mm | 18±1.5mm | 18±1.5mm |
3.7 | LTV | μm | ≤2μm(5mm*5mm) | NA |
3.8 | TTV | μm | ≤5μm | ≤15μm |
3.9 | Bow | μm | -15μm~15μm | -45μm~45μm |
3.10 | Warp | μm | ≤20μm | ≤50μm |
3.11 | (AFM) Front (Si-face) Roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra≤0.2nm(5μm*5μm) |
4.Structure | ||||
4.1 | Micropipe Density | ea/cm2 | ≤1ea/cm2 | ≤10ea/cm2 |
4.2 | Carbon Density | ea/cm2 | ≤1ea/cm2 | NA |
4.3 | Hexagonal void | -- | None | NA |
4.4 | Metal impurities | atoms/cm2 | ≤5E12atoms/cm2 | NA |
5.Front Quality | ||||
5.1 | Front | -- | Si | Si |
5.2 | Surface Finish | -- | SiCMP Si-face CMP | SiCMP Si-face CMP |
5.3 | Particles | ea/wafer | ≤60(size≥0.3μm) | NA |
5.4 | Scratches | ea/mm | ≤2 ,Total Length≤Diameter | NA |
5.5 | Orange peel/pits/stains/striations/cracks/contamination |
mm | None | NA |
5.6 | Edge chips/indents/fracture/hex plates | None | None | |
5.7 | Polytype areas | -- | None | ≤30% (Cumulative area) |
5.8 | Front laser marking | -- | None | None |
6.Back Quality | ||||
6.1 | Back Finish | -- | CCMP C-face CMP | CCMP C-face CMP |
6.2 | Scratches | ea/mm | ≤5 ,Total Length≤2*Diameter | NA |
6.3 | Back defects (edge chips/indents) | -- | None | None |
6.4 | Back roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra≤0.2nm(5μm*5μm) |
6.5 | Back laser marking | -- | 1mm (from top edge) | 1mm (from top edge) |
7. Edge | ||||
7.1 | Edge | -- | Chamfer | Chamfer |
Q1: What's the way of shipping ?