| Customization: | Available |
|---|---|
| Application: | Diode, Power Electronic Components |
| Certification: | RoHS |
Suppliers with verified business licenses
| No. | Items | Unit | Ultra-P Grade | Production Grade | Dummy Grade | |
| 1.Boule Parameters | ||||||
| 1.1 | Polytype | -- | 4H | 4H | 4H | |
| 1.2 | Surface orientation | ° | 4°toward<11-20>±0.5º | 4°toward<11-20>±0.5º | 4°toward<11-20>±0.5º | |
| 2. Electrical Parameters | ||||||
| 2.1 | Dopant | -- | n-type Nitrogen | n-type Nitrogen | n-type Nitrogen | |
| 2.2 | Resistivity | ohm·cm | 0.015~0.025ohm·cm | 0.015~0.025ohm·cm | NA | |
| 3. Mechanical Parameters | ||||||
| 3.1 | Diameter | mm | 200.0±0.2mm | 200.0±0.2mm | 200.0±0.2mm | |
| 3.2 | Thickness | μm | 500±25μm | 500±25μm | 500±25μm | |
| 3.3 | Notch orientation | ° | [1-100]±5° | [1-100]±5° | [1-100]±5° | |
| 3.4 | Notch depth | mm | 1~1.5mm | 1~1.5mm | 1~1.5mm | |
| 3.5 | LTV | μm | ≤3μm(10mm*10mm) | ≤5μm(10mm*10mm) | ≤15μm(10mm*10mm) | |
| 3.6 | TTV | μm | ≤7μm | ≤10μm | ≤20μm | |
| 3.7 | Bow | μm | -20μm~20μm | -25μm~25μm | -65μm~65μm | |
| 3.8 | Warp | μm | ≤30μm | ≤35μm | ≤70μm | |
| 3.9 | (AFM) Front (Si-face) Roughness |
nm | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm | |
| 4. Structure | ||||||
| 4.1 | Micropipe density | ea/cm2 | <0.2ea/cm2 | <2ea/cm2 | <50ea/cm2 | |
| 4.2 | Metal impurities | atoms/cm2 | ≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V, Mn) |
≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V,Mn) |
≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V, Mn) |
|
| 4.3 | TSD | ea/cm2 | ≤200ea/cm2 | ≤500ea/cm2 | NA | |
| 4.4 | BPD | ea/cm2 | ≤1000ea/cm2 | ≤2000ea/cm2 | NA | |
| 4.5 | TED | ea/cm2 | ≤3000ea/cm2 | ≤7000ea/cm2 | NA | |
| 5.Front Quality | ||||||
| 5.1 | Front | -- | Si | Si | Si | |
| 5.2 | Surface Finish | -- | CMP Si-face CMP | CMP Si-face CMP | CMP Si-face CMP | |
| 5.3 | Particles | ea/wafer | ≤60(size≥0.3μm) | ≤100(size≥0.3μm) | NA | |
| 5.4 | Scratches | ea/mm | ≤5,Total Length≤ 1/2*Diameter |
≤5,Total Length≤Diameter | NA | |
| 5.5 | Edge chips/indents/cracks/contamination/stains |
-- | None | None | NA | |
| 5.6 | Polytype areas | -- | None | None | ≤30%Cumulative area) |
|
| 5.7 | Front laser marking | -- | None | None | None | |
| 6. Back Quality | ||||||
| 6.1 | Back finish | -- | C-face polished | C-face polished | C-face polished | |
| 6.2 | Scratches | ea/mm | ≤5,Total Length≤Diameter | NA | NA | |
| 6.3 | Back defects (edge chips/indents) | -- | None | None | NA | |
| 6.4 | Back roughness | nm | Ra≤5nm | Ra≤5nm | Ra≤5nm | |
| 6.5 | Back laser marking | -- | Notch, SEMI | Notch, SEMI | Notch, SEMI | |
| 7.Edge | ||||||
| 7.1 | Edge | -- | Chamfer | Chamfer | Chamfer | |
| 8. Packaging | ||||||
| 8.1 | Packaging | -- | Epi-ready with vacuum packaging |
Epi-ready with vacuum packaging |
Epi-ready with vacuum packaging |
|
| 8.2 | Packaging | -- | Multi-wafer or single wafer cassette packaging |
Multi-wafer or single wafer cassette packaging |
Multi-wafer or single wafer cassette packaging |
|
| Notes: "NA"means no request. Items not metioned may refer to SEMI-STD. | ||||||
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
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